 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SPD 28N03 SIPMOS(R) Power Transistor Features * N channel * Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS ID 30 28 V A Enhancement mode RDS(on) 0.023 * Avalanche rated * dv/dt rated * 175C operating temperature Type SPD28N03 SPU28N03 Package P-TO252 Ordering Code Q67040-S4138 Packaging Tape and Reel Pin 1 G Pin 2 Pin 3 D S P-TO251-3-1 Q67040-S4140-A2 Tube Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Continuous drain current Symbol Value 28 28 112 145 7.5 6 kV/s mJ Unit A ID TC = 25 C, 1) TC = 100 C Pulsed drain current IDpulse EAS EAR dv/dt TC = 25 C Avalanche energy, single pulse ID = 28 A, VDD = 25 V, RGS = 25 Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt IS = 28 A, VDS = 24 V, di/dt = 200 A/s, Tjmax = 175 C Gate source voltage Power dissipation VGS Ptot T j , Tstg 20 75 -55... +175 55/175/56 V W C TC = 25 C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Data Sheet 1 06.99 SPD 28N03 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area2) Symbol min. Values typ. max. 2 100 75 50 K/W Unit RthJC RthJA RthJA - Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Drain- source breakdown voltage Symbol min. Values typ. 3 max. 4 A 0.1 10 1 100 100 nA 0.014 0.023 V Unit V(BR)DSS VGS(th) I DSS 30 2.1 VGS = 0 V, ID = 0.25 mA Gate threshold voltage, VGS = VDS ID = 50 A Zero gate voltage drain current VDS = 30 V, VGS = 0 V, T j = 25 C VDS = 30 V, VGS = 0 V, T j = 150 C Gate-source leakage current I GSS RDS(on) VGS = 20 V, VDS = 0 V Drain-Source on-state resistance VGS = 10 V, ID = 28 A 1current limited by bond wire 2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for drain connection. PCB is vertical without blown air. Data Sheet 2 06.99 SPD 28N03 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Symbol min. Values typ. 23 860 450 195 16 max. 1075 565 245 24 ns S pF Unit g fs Ciss Coss Crss t d(on) 10 - VDS2*ID*RDS(on)max , ID = 28 A Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time VDD = 15 V, V GS = 10 V, ID = 28 A, RG = 12 Rise time tr - 38 57 VDD = 15 V, V GS = 10 V, ID = 28 A, RG = 12 Turn-off delay time t d(off) - 35 53 VDD = 15 V, V GS = 10 V, ID = 28 A, RG = 12 Fall time tf - 36 54 VDD = 15 V, V GS = 10 V, ID = 28 A, RG = 12 Data Sheet 3 06.99 SPD 28N03 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Dynamic Characteristics Gate to source charge Symbol min. Values typ. 4 13.6 25 5.6 max. 6 20 38 V nC Unit Q gs Q gd Qg V(plateau) - VDD = 24 V, ID = 28 A Gate to drain charge VDD = 24 V, ID = 28 A Gate charge total VDD = 24 V, ID = 28 A, VGS = 0 to 10 V Gate plateau voltage VDD = 24 V, ID = 28 A Reverse Diode Inverse diode continuous forward current IS I SM VSD t rr Q rr - 1.1 38 0.032 28 112 1.7 57 A TC = 25 C Inverse diode direct current,pulsed TC = 25 C Inverse diode forward voltage V ns VGS = 0 V, I F = 56 A Reverse recovery time VR = 15 V, IF=IS , diF/dt = 100 A/s Reverse recovery charge 0.048 C VR = 15 V, IF=l S , diF/dt = 100 A/s Data Sheet 4 06.99 SPD 28N03 Power Dissipation Drain current Ptot = f (TC) SPD28N03 ID = f (TC ) parameter: VGS 10 V SPD28N03 80 W 30 A 24 60 22 20 Ptot ID 100 120 140 160 C 190 50 18 16 14 40 30 12 10 20 8 6 10 4 2 0 0 20 40 60 80 0 0 20 40 60 80 100 120 140 160 C 190 TC TC Safe operating area Transient thermal impedance I D = f (V DS) parameter : D = 0 , T C = 25 C 10 3 SPD28N03 ZthJC = f (tp ) parameter : D = tp /T 10 1 SPD28N03 K/W A 10 0 tp = 28.0s Z thJC 100 s 10 2 DS /I D ID R DS ( on ) = 10 -1 V D = 0.50 10 -2 0.20 0.10 0.05 10 ms 10 1 1 ms 10 -3 single pulse 0.02 0.01 DC 10 0 -1 10 10 -4 -7 10 10 0 10 1 V 10 2 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS tp Data Sheet 5 06.99 SPD 28N03 Typ. output characteristics I D = f (VDS) parameter: tp = 80 s SPD28N03 Typ. drain-source-on-resistance RDS(on) = f (ID) parameter: V GS SPD28N03 70 A Ptot = 75W 0.075 b c d e f 60 55 50 k lj i h g VGS [V] a 4.0 b 4.5 0.060 f 45 d e f 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 10.0 RDS(on) c 5.0 0.055 0.050 0.045 0.040 0.035 0.030 0.025 0.020 0.015 g h k lj i ID 40 35 30 25 20 15 10 5 a b c e g h i dj k l 0.010 VGS [V] = 0.005 V b 4.5 c 5.0 d 5.5 e f 6.0 6.5 g 7.0 h i 7.5 8.0 j 8.5 k l 9.0 10.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 VDS 0.000 0 10 20 30 40 A 55 ID Typ. transfer characteristics I D= f (VGS) parameter: tp = 80 s Typ. forward transconductance gfs = f(ID ); Tj = 25C parameter: gfs 25 VDS 2 x I D x RDS(on) max 70 A S 50 gfs V ID 40 15 30 10 20 5 10 0 2 4 6 10 0 0 5 10 15 20 25 30 A 40 VGS ID Data Sheet 6 06.99 SPD 28N03 Drain-source on-resistance Gate threshold voltage RDS(on) = f (Tj) parameter : ID = 28 A, VGS = 10 V SPD28N03 VGS(th) = f (Tj) parameter : VGS = V DS, ID = 50 A 5.0 V 4.4 0.060 0.050 4.0 VGS(th) RDS(on) 0.045 0.040 0.035 0.030 0.025 0.020 0.015 0.010 0.005 0.000 -60 -20 20 60 100 140 C 3.6 3.2 2.8 98% 2.4 2.0 1.6 max typ 1.2 0.8 typ min 0.4 0.0 -60 200 -20 20 60 100 140 C 200 Tj Tj Typ. capacitances C = f (VDS) parameter: V GS = 0 V, f = 1 MHz 2000 Forward characteristics of reverse diode IF = f (VSD ) parameter: Tj , tp = 80 s 10 3 SPD28N03 A pF 10 2 C 1000 Ciss IF 10 1 500 Coss Tj = 25 C typ Tj = 175 C typ Tj = 25 C (98%) Tj = 175 C (98%) 35 10 0 0.0 Crss 0 0 5 10 15 20 25 V 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VDS VSD Data Sheet 7 06.99 SPD 28N03 Avalanche Energy EAS = f (Tj) parameter: ID = 28 A, V DD = 25 V RGS = 25 150 Typ. gate charge VGS = f (QGate ) parameter: ID puls = 28 A SPD28N03 16 V mJ 12 VGS EAS 100 10 0,2 VDS max 0,8 VDS max 75 8 6 50 4 25 2 0 20 40 60 80 100 120 140 C 180 0 0 4 8 12 16 20 24 28 Tj nC 36 Q Gate Drain-source breakdown voltage V(BR)DSS = f (Tj) SPD28N03 37 V 35 V(BR)DSS 34 33 32 31 30 29 28 27 -60 -20 20 60 100 140 C 200 Tj Data Sheet 8 06.99 |
Price & Availability of SPD28N03
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |